发明名称 |
Semiconductor chip, semiconductor device, circuit board and electronic equipmentand production methods for them |
摘要 |
A semiconductor chip having a vertical current conduction structure of a high aspect ratio and high reliability: a semiconductor device, a circuit substrate, and an electronic apparatus each containing such semiconductor chips; and a method for producing them. A prehole (3) is formed in a silicon substrate (10) surface-oriented to a (100) face by laser beam irradiation. The prehole (3) is enlarged by anisotropic etching to thereby form a through-hole (4). An electrically insulating film is formed on an inner wall of the through-hole (4). An electrically conducting material is provided inside the insulating film to thereby form a metal bump (30). <IMAGE> |
申请公布号 |
AU1687300(A) |
申请公布日期 |
2000.07.03 |
申请号 |
AU20000016873 |
申请日期 |
1999.12.16 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
KAZUSHIGE UMETSU;JUN AMAKO;SHINICHI YOTSUYA;KATSUJI ARAKAWA |
分类号 |
B23K26/06;H01L21/48;H01L21/768;H01L23/48;H01L25/065 |
主分类号 |
B23K26/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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