发明名称 Ion implantation equipment used for semiconductor manufacture, includes main controller which detects current level to generate control signal based on which ion implantation turbine pump operation is controlled
摘要 Current detector (30) detects the amount of current flow in the turbine pump. Main controller (60) judges whether the detected amount of current is below preset lower limit or above upper limit value to generate power supply control signal. Based on the control signal, stoppage of ion implantation in the state of high vacuum and power off of turbine pump is performed. Current detector detects amount of current flow in the turbine pump. The information corresponding to detected amount of current is displayed using display device (40). An Independent claim is also included for turbine pump operation monitoring method for use in implantation equipment.
申请公布号 DE19860828(A1) 申请公布日期 2000.07.13
申请号 DE1998160828 申请日期 1998.12.30
申请人 SAMSUNG ELECTRONICS CO. LTD., SUWON 发明人 CHOI, SUN-BONG;LIM, DONG-HA;JUNG, HYO-SANG;HAN, SUNG-KYU
分类号 F04D19/04;F04D27/02;H01J37/18;H01J37/317;H01L21/265;(IPC1-7):H01J37/317;F04D15/00;F04B49/06 主分类号 F04D19/04
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