| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing method capable of preventing the generation of an etching stop without causing damage to a photoresist film layer. SOLUTION: A processing gas including C4F8, CO, and Ar is introduced into the processing chamber 102 of an etching device 300 and then plasma is produced to etch a SiO2 film layer formed on a wafer W on a bottom electrode 106. An analyzer 302 measures the amounts of the etchant and the by- products in the plasma from infrared laser beams passing the plasma by an infrared laser absorption analyzing method. A controller 156 controls the dose of O2 gas so that the amounts of the etchant and the by-product measured are equal to those previously set according to an increase in the aspect ratio of the contact hole to dope the processing gas with the O2 gas, wherein the dose of the O2 gas is increased according to an increase in the aspect ratio.
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