| 摘要 |
PROBLEM TO BE SOLVED: To prevent induction of etching damages in a semiconductor substrate as much as possible, without increasing the number of processes. SOLUTION: After a plurality of impurity regions 2a, 2a', and 2b is formed in a semiconductor substrate 1, a conductive pattern 6b is formed in the opening of an interlayer insulating film 5 on a prescribed one 2b of the impurity regions. Then an interlayer insulating film 8 is formed over the whole surface, and a first connecting hole 8a which is made through the interlayer insulating films 8 and 5 and a second connecting hole 8b, which is made through the interlayer insulting film 8 and conductive pattern 6b are formed simultaneously. Since the etching rate is adjusted due to the conductive pattern 6b at making of the holes 8a and 8b, the amount of overetching can be reduced as much as possible. In addition, an increase in number of processes is suppressed by simultaneously forming the pattern 6a with other conductive layers 6a and 7, and in addition, the induction of etching damages in the substrate 1 can be prevented effectively at working of the conductive layers.
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