发明名称 ETCHING METHOD
摘要 PROBLEM TO BE SOLVED: To realize an etching method effective for fine machining of a BST (BaxSr1-xTiO3) film. SOLUTION: Only Ti element in a BST film 9 to be a part of contact holes 14 is selectively removed by the reactive ion etching using Cl2 gas, then, as the result, the BST film 9 to be a part of the contact holes changes to a Ba- Sr-Cl-O film 13, and this film 13 is removed by the wet etching using dil. hydrochloric acid soln.
申请公布号 JP2000216142(A) 申请公布日期 2000.08.04
申请号 JP19990014565 申请日期 1999.01.22
申请人 TOKYO ELECTRON LTD;TOSHIBA CORP 发明人 KIYOTOSHI MASAHIRO;EGUCHI KAZUHIRO;YAMAMOTO HIROYUKI;KANEDA NAOYA
分类号 H01L21/302;H01L21/3065;H01L21/8242;H01L27/108;(IPC1-7):H01L21/306;H01L21/824 主分类号 H01L21/302
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