| 摘要 |
PROBLEM TO BE SOLVED: To enable an insulating film formed at a low temperature to be modified by low-temperature annealing so as to simplify a manufacturing device system in structure, by a method wherein hydrogen gas is spouted out against a resistance heater of catalyst to be partially decomposed, and the insulating film is exposed to an atmosphere of active species generated by decomposition. SOLUTION: A gas feed pipe 18 with a nozzle and a tungsten catalyst 20 are arranged so as to confront a specimen 15, a shutter 23 is provided between them, an AC power is applied to the tungsten catalyst 20, and the resistance heater of the tungsten catalyst 20 is kept at a temperature of 1800 to 1900 deg.C. Hydrogen gas 19 is spouted out against the tungsten catalyst 20 to come into contact with the catalyst 20, by which hydrogen gas 19 is decomposed into active species such as radicals or the like, and the shutter 23 is opened to make the specimen 15 exposed to an atmosphere that contains the active species, by which a film is formed or subjected to an annealing treatment.
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