| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering device capable of holding discharge at a vacuum degree of <=1 mTorr and capable of stably forming a thin film under low gas pressure. SOLUTION: In a sputtering device, electromagnetic waves generated by an antenna 15 are introduced into a vacuum vessel 1 via an electromagnetic wave introducing window 17 composed of dielectrics, furthermore, electric power is fed from a power source 11 for discharge to a target 9, by which the holding of discharge under low gas pressure is made possible to stably generate plasma, and, even under low gas pressure, a film of high quality can be formed on the substrate 14 by a sputtering method.
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