| 摘要 |
PROBLEM TO BE SOLVED: To restrain a leakage current from being produced by a method, wherein an opening is provided to an interlayer film on a semiconductor substrate, a CVD insulating film and a thermal oxide film are formed on the opening, the CVD insulating film is etched back, the thermal oxide film is removed so as to make the surface of the semiconductor substrate exposed, and the opening is filled up with conductive material. SOLUTION: A first and a second interlayer films 5 and 11, and an insulating film 12 are formed on a semiconductor substrate 1 which includes a diffused layer 4. Then, an opening 19 is provided above the diffused layer 4 so as to make the surface of the semiconductor substrate 1 exposed, and a CVD insulating film 14 is formed on the inner surface of the opening 19 and the insulating film 12. In succession, a thermal oxide film is formed at the bottom of the opening 19, then the CVD insulating film is etched back for the formation of a sidewall 20, and the thermal oxide film is removed so as to expose the surface of the semiconductor substrate 1. Furthermore, the opening 19 provided with the side wall 20 is filled up with conductive material, a capacitive contact 16 and a storage electrode 17 are formed, and then a polycrystalline silicon film 18 is formed.
|
