发明名称 |
MANUFACTURE OF SEMICONDUCTOR MECHANICAL MASS SENSOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacture of a semiconductor mechanical mass sensor which prevents stacking of a movable electrode and a fixed electrode when they are being fabricated or used and can improve the yield. SOLUTION: Electrode pads 4c, 5c are formed on an SOI substrate 14 where a single crystal silicon thin film 14b is provided on a single crystal silicon wafer 14a via a silicon oxide film 14c. The single crystal silicon thin film 14b is ground and polished. A mask 15 is formed. A trench 16 is formed in the single crystal silicon thin film 14b so as to reach the silicon oxide film 14c. The single crystal silicon wafer 14a is wet-etched with a predetermined film thickness left. The remaining single crystal silicon wafer 14a is removed by dry-etching. The silicon oxide film 14c is removed by dry-etching and a hydrophobic thin film 17 is deposited on a surface of a movable electrode 10a and a fixed electrode 4b.
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申请公布号 |
JP2000243977(A) |
申请公布日期 |
2000.09.08 |
申请号 |
JP19990041967 |
申请日期 |
1999.02.19 |
申请人 |
DENSO CORP;NIPPON SOKEN INC |
发明人 |
YAMAMOTO TOSHIMASA;MUTO KOJI;KARESUE MASAKAZU;ASAUMI KAZUSHI;FUKADA TAKESHI |
分类号 |
H01L21/302;B81B3/00;B81C1/00;G01L1/14;G01P15/125;H01L21/306;H01L21/3065;H01L29/84;(IPC1-7):H01L29/84 |
主分类号 |
H01L21/302 |
代理机构 |
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地址 |
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