| 摘要 |
PROBLEM TO BE SOLVED: To obtain a horizontal SOIBMFET which is suitable for an IC by a method, wherein a drift region is formed on the top surface of an buried insulating film, a gate region is arranged apart from the drift region, and a drain region is formed confronting a source region separate from the gate region. SOLUTION: A lightly-doped N--type drift region 52 is epitaxially grown on the top surface of a buried oxide film 51 on a semiconductor substrate 50, and then an oxide film 53 is formed thereon, and a trench T is cut in the drift region 52. A heavily-doped P+-type gate region 54 is formed separate from the trench T by a prescribed space. The gate region 54 is formed above the top surface of the buried oxide film 51 by a distance d corresponding to a channel depth. Then, an N-type source region 55 is formed between the trench T and the gate region 54. An N+-drain region 56 is formed counterposing the source region 55 separated from the gate region 54 by a prescribed distance, at the same time as when the source region 55 is formed.
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