发明名称 MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETORESISTANCE EFFECT HEAD
摘要 PROBLEM TO BE SOLVED: To obtain excellent thermal stability and a large magnetoresistance change rate (MR ratio) by successively laminating a first ferromagnetic layer, a nonmagnetic layer, a second ferromagnetic layer, an oxide antiferromagnetic body in which conduction electrons are easily reflected while the direction of spins of electrons is maintained and a metal ferromagnetic body. SOLUTION: The oxide antiferromagnetic body layer 6 and the metal antiferromagnetic body layer 7 are combined to act as one antiferromagnetic body. Namely, the second ferromagnetic layer 5 accepts an exchange bias magnetic field from the oxide antiferromagnetic body layer 6 and the metal antiferromagnetic body layer 7 to fix the magnetization direction in one direction. The first ferromagnetic layer 3 formed through the nonmagnetic layer 4 rather freely changes the magnetization direction according to an external magnetic field, and the relative angle between the magnetization direction of the first ferromagnetic layer (free layer) 3 and the second ferromagnetic layer (pin layer) 5 changes to vary the electric resistance (magnetoresistance). Therefore, as an MR sensor, changes in the resistance caused by the external magnetic field can be read as electric signals.
申请公布号 JP2000242913(A) 申请公布日期 2000.09.08
申请号 JP19990044397 申请日期 1999.02.23
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KAWAWAKE YASUHIRO;SUGITA YASUNARI;SATOMI MITSUO;SAKAKIMA HIROSHI
分类号 G11B5/39;G01R33/09;H01F10/14;H01F10/16;H01F10/26;H01F10/32;H01L43/08;(IPC1-7):G11B5/39 主分类号 G11B5/39
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