摘要 |
PROBLEM TO BE SOLVED: To obtain excellent thermal stability and a large magnetoresistance change rate (MR ratio) by successively laminating a first ferromagnetic layer, a nonmagnetic layer, a second ferromagnetic layer, an oxide antiferromagnetic body in which conduction electrons are easily reflected while the direction of spins of electrons is maintained and a metal ferromagnetic body. SOLUTION: The oxide antiferromagnetic body layer 6 and the metal antiferromagnetic body layer 7 are combined to act as one antiferromagnetic body. Namely, the second ferromagnetic layer 5 accepts an exchange bias magnetic field from the oxide antiferromagnetic body layer 6 and the metal antiferromagnetic body layer 7 to fix the magnetization direction in one direction. The first ferromagnetic layer 3 formed through the nonmagnetic layer 4 rather freely changes the magnetization direction according to an external magnetic field, and the relative angle between the magnetization direction of the first ferromagnetic layer (free layer) 3 and the second ferromagnetic layer (pin layer) 5 changes to vary the electric resistance (magnetoresistance). Therefore, as an MR sensor, changes in the resistance caused by the external magnetic field can be read as electric signals.
|