| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor structure that prevents shortage between lower electrodes of stacked capacitors. SOLUTION: A method of forming a capacitor structure of an semiconductor integrated circuit device includes a step of forming an insulating film pattern having a contact hole 3 that exposes a specified region on a semiconductor substrate, a step of forming a lower electrode 4 of a stacked capacitor that is connected to the exposed semiconductor substrate at the specified region of the insulating film pattern through the contact hole 3, a step of forming an insulating film on the lower electrode 4 of the stacked capacitor and etching back the film, a step of forming a side-wall 5 composed of the insulating film surrounding the periphery of the lower electrode 4 of the stacked capacitor, and a step of changing only the upper surface of the lower electrode 4 of the stacked capacitor to HSG(hemisperical grained)-Si 6. The capacitor structure of a semiconductor integrated circuit device formed by this method has a lower electrode 4 of a stacked capacitor having an upper surface of HSG-Si.
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