| 摘要 |
PURPOSE: Metal silicide film forming method of semiconductor device provides to improve surface morphology and leakage characteristics. CONSTITUTION: Metal silicide film forming method of semiconductor device comprising a metal film(13) for silicide is formed on a silicone substrate(1) formed a transistor comprising a source(9), drainage(11), gate oxide film, gate electrode(5) and spacer(7), the silicone substrate(1) formed the metal film(13) performing Siliciding reaction firstly without generating bridge between the gate electrode(5) and the source(9) and drainage(11) by heat treating at 1st temperature of nitrogen or argon atmosphere. a high resistance metal silicide film(15) is formed on the source(9), the drainage(11), the gate electrode(5), as a high resistance metal silicide film(15), a CoSi is formed when, metal film is formed with Co. then non reacted material of metal film is removed generating when heat treated on the 1st temperature. The silicone substrate(1) which formed the high resistance metal silicide film(15) is performed a 2nd Siliciding process in the silicone source, as silane or disilane gas atmosphere with a higher temperature of 2nd temperature than the 1st temperature. then low resistance metal silicide film(17) is formed on the source(9),the drainage(11), the gate electrode(5).
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