METHOD AND APPARATUS FOR GROWING HIGH PURITY SINGLE CRYSTAL SILICON CARBIDE
摘要
Method and apparatus for growing semiconductor grade silicon carbide boules (84). Pure silicon feedstock (36) is melted and vaporized. The vaporized silicon is reacted with a high purity carbon-containing gas (64), such as propane, and the gaseous species resulting from the reaction are deposited on a silicon carbide seed crystal (50), resulting in the growth of monocrystalline silicon carbide.
申请公布号
EP1038055(A1)
申请公布日期
2000.09.27
申请号
EP19980961913
申请日期
1998.12.08
申请人
NORTHROP GRUMMAN CORPORATION
发明人
BALAKRISHNA, VIJAY;THOMAS, R., NOEL;AUGUSTINE, GODFREY;HOPKINS, RICHARD, H.;HOBGOOD, H., MCDONALD