| 摘要 |
PROBLEM TO BE SOLVED: To equalize heating temperature in the peripheral direction of a substrate to be processed, and effect uniform processing for the substrate to be processed by a method wherein, in a single wafer heater, a container housing to be processed is made to have the same degree of insertion port of the substrate as the inner peripheral face, excluding it in the degree of heat absorption. SOLUTION: On an inner peripheral face 22 excluding the part of a wafer inset port 23 of a sidewall part of a chamber 21, there is provided a groove 24 along the peripheral direction, and a heat absorbing degree of the inner peripheral face 22, excluding the part of the wafer insertion port 23, is set to the same degree as that of a part of the wafer insertion port 23, whereby heat rays in the chamber 21 are uniformly absorbed on all the inner peripheral face 22 inclusive of the wafer insertion port 23 of the sidewall part of the chamber 21, and a heating temperature in the peripheral direction of a wafer W is equalized.
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