| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulated-gate field-effect semiconductor device, in which impurity for applying one conductivity is prevented from going through a gate electrode constituted of a semiconductor and from spreading to a channel formation area. SOLUTION: A gate electrode formed on a gate electrode 13 is constituted of two layers as shown by a semiconductor layer 14 and a semiconductor layer 15. At that time, impurity for imparting one conductivity is not doped to the semiconductor layer 14, and impurity for one conductivity is doped to the semiconductor layer 15 at high density. Then, the non-doped semiconductor layer 14 is present so that impurity in the semiconductor layer 15 can be prevented from going through the gate electrode 13 and spreading to a channel formation region 17. Also the semiconductor 15, due to the presence of the impurity for applying one conductive type is doped to a high density, the gate electrode having a low resistance can be realized. |
