| 摘要 |
PROBLEM TO BE SOLVED: To reduce a wiring-to-wiring capacitance and to enhance the adhesion between an interlayer insulation film and a barrier film by forming the barrier film which is made of tantalum nitride containing a specific nitrogen in the recess of the interlayer insulation film. SOLUTION: After forming a SiO2 insulation film 2, an etching stopper film 3, a layer insulation film 4 on a silicon substrate 1, a recess 6 is formed by etching the layer insulation film 4 with a resist mask 5. The substrate having the recess is placed in a sputtering apparatus to form a tantalum-based barrier film 7 made of tantalum, tantalum nitride, etc., a copper sputtering film 8, a copper plating film 9. For the barrier film 7, tantalum nitride containing 30-60% (40-60% is desirable) nitrogen is used so as to make it possible to form wiring which will keep the original adhesion strength even after annealing. This can enhance the adhesion between the barrier film and layer insulation film even if annealing, which is intended for reduction in the specific resistance of the copper wiring layer and for increase in the resistance against EM is given before CMP treatment. |
