| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of an SGT (Surrounding Gate Transistor) which enables a structure for achieving low resistance of a source, a drain and a gate, and intended gate length, intended shapes of the source and the drain and an intended diameter of a columnar semiconductor to be obtained.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a columnar first conductivity type semiconductor layer; a process of forming a second conductivity type semiconductor layer on a lower part of the columnar first conductivity type semiconductor layer; a process of forming a gate insulation film and a gate electrode around the columnar first conductivity type semiconductor layer; a process of forming an insulation film on an upper part of a gate and on a side wall of an upper part of the columnar first conductivity type semiconductor layer; a process of forming an insulation film on a side wall of the gate; a process of forming a second conductivity type semiconductor layer on an upper part of the columnar first conductivity type semiconductor layer; and a process of forming a compound of metal and semiconductor on the second conductivity type semiconductor layers formed on the upper part and the lower part of the columnar first conductivity type semiconductor layer and the gate. |
