| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where a capacitor of COP structure is improved in characteristics and reliability and a method of manufacturing the same. SOLUTION: A transistor Q is formed on a silicon substrate 11 and covered with an interlayer insulating film 17. A contact hole 18 is bored in the interlayer insulating film 17, a groove 19 is cut in the region of the film 17 which includes the contact hole 18, and a contact plug 21 is filled in the contact hole 18 and the groove 19. A ferroelectric capacitor C composed of a lower electrode 22, a ferroelectric film 23, and an upper electrode 24 is formed on the contact plug 21 so as to be located inside its peripheral edge.
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