| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device capable of forming satisfactory high meeting point metal silicide. SOLUTION: This manufacture is one for forming a CoSi2 film in a gate electrode 26 and source/drain regions 32, 34, and ions are injected to a Si substrate to form impurity layers 32, 34, and next a mask oxide film 30 is removed, and a high concentration As existing region 36 as a silicide reaction hindering layer is exposed to a metal face. Next, it is heated to activate impurities of the N-type impurity layer 32 and P-type impurity layer 34. A substrate is dipped in ammonium per-water to remove high concentration As existing region 36. A normal cleaning step and HF processing are performed, and a Co film is deposited on a substrate face through sputtering. First silicifying annealing, wet-etching, and second silicifying annealing are performed on the Co film, and an invert reaction to a CoSi2 film is completed, and the CoSi2 film is formed on the gate electrode 26, the N-type source/drain region 32 and the P-type source/drain region 34.
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