METHOD FOR GROWING II-VI COMPOUND SEMICONDUCTOR CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for stably growing a II-VI compound semiconductor crystal having excellent crystallinity on a seed crystal by a sublimation method or halogen chemical transportation method. SOLUTION: A seed crystal supporting member 1 in the method for growing the II-V compound semiconductor crystal by the sublimation method or halogen chemical transportation method on the seed crystal by arranging raw material polycrystals 6 and the seed crystal 4 held on the seed crystal supporting member 1 so as to face each other in a growth chamber 10 is composed of material which is stable to a crystal growth temperature and is transparent to visible light and/or IR light and a buffer film 9 consisting of the material which is stable to the crystal growth temperature and is transparent to the visible light and/or IR light is formed on at least the surface of the seed crystal supporting member in contact with the seed crystal 4. The crystal growth is executed by holding the seed crystal on the seed crystal supporting member via this buffer film.