SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent efficiency deterioration due to juncture temperature rise. SOLUTION: A means is selected from the following three alternatives: thermally coupling a transistor(TR) for power amplification and a TR 6 of a current mirror circuit by a metal electrode layer 4; arranging a TR for potential generation of the current mirror circuit between fingers 1A and 1B of the TR for power amplification; or making the distance between the TR for potential generation of the current mirror circuit and the fingers 1A and 1B of the TR for power amplification less than the thickness of a semiconductor substrate 7.