| 摘要 |
PROBLEM TO BE SOLVED: To enhance accuracy in alignment between a gate electrode and a recess, in the formation of a semiconductor device with a recess concurrently using an EB lithography and a photolithography. SOLUTION: An EB mark 109a and a recess 110a are made at the same time, by a (second) photolithography using one time of photoresist film pattern 122a. Since the EB mark 109a, the recess, the openings for formation of the EB mark and the recess, or the opening for formation of the EB mark, and the recess are made at the same time by one time photolithography, the accuracy in alignment between the recess and the gate electrode becomes equal to the accuracy of alignment of on time of EB lithography. As a result, a compound semiconductor device superior in high-speed operation property can be manufactured easily. |
