| 摘要 |
PROBLEM TO BE SOLVED: To suppress short-channel effect of a memory cell transistor and to improve a cell capacitor in charge-holding characteristics. SOLUTION: A semiconductor device is equipped with a gate electrode 7, formed on a P-type semiconductor substrate 1 through the intermediary of a gate oxide film 6, N-type source/drain regions 10 and 23 which are formed on the surface layer of the substrate 1 adjacent to the gate electrode 7, a bit line 20 which is brought into contact with the drain region 23, and a cell capacitor 28 kept in contact with the source region 10. The diffusion depth of the source region 10 is made deeper than that of the drain region 23.
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