| 摘要 |
PURPOSE: A method for manufacturing a capacitor having a tungsten silicide storage electrode is provided to improve reliability of a semiconductor device using a high dielectric material and to reduce a manufacturing cost, by forming a tungsten silicide storage electrode having a good step coverage and a superior acid-resistant property. CONSTITUTION: A polysilicon layer is formed on a substrate by a chemical vapor deposition(CVD) method. A tungsten layer is formed on the polysilicon layer by a CVD method. The polysilicon layer and tungsten layer are thermally processed to form a tungsten silicide storage electrode. A dielectric layer is formed on the tungsten silicide storage electrode. A plate electrode is formed on the dielectric layer.
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