发明名称 NONVOLATILE SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To downsize a CMOS transfer circuit and facilitate its layout. SOLUTION: In a layout of a CMOS transfer circuit (transfer gate type/ inverter type) for transferring prescribed potentials to word lines, p-channel MOS transistors are formed on n-type well regions 32, on which signal lines 56 (signal lines and control signal line pairs Mx, MxB connected to the word lines) extending in the row directions are laid on a first wiring layer and signal lines 56 (control signal lines BiJj and signal line VBBBi)) extending in the columnar directions are laid on a second wiring layer. N-channel MOS transistors are formed on p-type well regions 33, on which signal lines (control signal lines BiFj and signal lines VBBBi) extending in the columnar directions are laid on a first wiring layer and signal lines 57 (signal lines and control signal line pairs Mx, MxB connected to ward lines) extending in the row directions, are laid on a second wiring layer.
申请公布号 JP2001015718(A) 申请公布日期 2001.01.19
申请号 JP19990187051 申请日期 1999.06.30
申请人 TOSHIBA MICROELECTRONICS CORP;TOSHIBA CORP 发明人 TAKANO YOSHINORI;TANZAWA TORU;TAURA TADAYUKI;MIYAHA TAKESHI;ATSUMI SHIGERU
分类号 H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L27/115;H01L21/824 主分类号 H01L21/8247
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