| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method therefor wherein variations in the amount of main current can be reduced and the electrical characteristics can hence be improved, by making uniform the LDD lengths (lengths of lightly doped regions) of a plurality of kinds of IGFETs (insulating gate field-effect transistors) on a single substrate, which have different dielectric breakdown values in particular, and further to provide a liquid crystal driver and a method therefor wherein variations in offset voltage can be reduced. SOLUTION: In a liquid crystal driver device (a semiconductor device for a liquid crystal driver), the lengths of LDD regions 52 and 56 of an LDD- structured low dielectric breakdown IGFET are made uniform by self alignment, and the lengths of LDD regions 61 and 65 of an LDD-structured high dielectric breakdown IGFET are made uniform by self alignment, both IGFETs constituting a differential amplifier circuit. The LDD lengths are determined by a side wall spacer mask formed on the sidewalls of gate electrodes 40 to 43. When the LDD lengths are uniform, variations in the amount of main current are reduced, and hence variations in the offset voltage of the differential amplifier circuit can be reduced.
|
