发明名称 FORMATION OF COATING FILM AND MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent the reduction of crack resistance film thickness and mechanical strength by applying a liquid material as a coating film onto a substrate and heating the substrate on one hot plate to form a coating film. SOLUTION: A varnish that a polymethyl siloxane is dissolved is applied as a solvent onto an Si substrate by using a coke, and the Si substrate is moved by a transfer arm 3, and then it is placed on a hot plate 1 kept at 80 deg.C and heated thereon for one minute. While the Si substrate is left there, the output of a heater of the hot plate l is increased and the temperature of the Si substrate is raised up to 200 deg.C, and it is heated for one minute. Furthermore, the temperature thereof is raised at a rate of 50 deg.C/min up to 450 deg.C, and the substrate is heated at 450 deg.C for 30 minutes. Thus, the device can be made compact in size and an atmosphere during heating be controlled accurately, and furthermore, a coating film can be formed by a hot plate without reducing the crack resistance film thickness and mechanical strength.
申请公布号 JP2001015502(A) 申请公布日期 2001.01.19
申请号 JP19990182057 申请日期 1999.06.28
申请人 TOSHIBA CORP 发明人 YAMADA NOBUHIDE;MIYAJIMA HIDESHI;NAKADA RENPEI;KAWAI MOTONOBU
分类号 H01L21/768;H01L21/312;H01L21/316;H01L21/324;(IPC1-7):H01L21/316 主分类号 H01L21/768
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