| 摘要 |
PROBLEM TO BE SOLVED: To obtain an SOI element which prevents the generation of a leakage current due to a fringe effect, which prevents an increase in an OFF-leakage current and whose element characteristic and reliability are enhanced, by a constitution wherein a gate electrode is arranged only on an active region and its end parts are not covered. SOLUTION: Since a gate-electrode pattern 32a is formed in such a way that a first conductive film which is left on an active region AR is etched, it is arranged only on the active region AR. On the other hand, a gate-electrode line 34a is arranged not only on the gate-electrode pattern 32a but also on a field region FR in such a way that it connects gate electrode patterns 32 which are arranged in a row and which are formed respectively on an adjacent active region AR. In this SOI element, a gate electrode which is composed of the gate-electrode pattern 32a and the gate-electrode line 34a is formed only on the active region AR, and a structure in which ends of the active region AR are not covered is formed. As a result, a leakage current at a time when a channel is first turned on at the ends of the active region AR is not generated.
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