发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device with a novel structure that is capable of retaining memory contents under no-power condition (i.e., nonvolatile) and has no limitation on the number of times of writing.SOLUTION: A semiconductor memory device comprises: a memory cell array in which a plurality of memory cells are arranged in a matrix shape; a decoder for selecting a memory cell to perform operation from among the plurality of memory cells depending on a control signal; and a control circuit for selecting whether to output the control signal to the decoder. In addition, each of the plurality of memory cells retains data by turning off a selection transistor whose channel region is formed by an oxide semiconductor.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016189231(A) |
申请公布日期 |
2016.11.04 |
申请号 |
JP20160118472 |
申请日期 |
2016.06.15 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
NAGATSUKA SHUHEI;TAKAHASHI YASUYUKI |
分类号 |
G11C11/407;G11C11/405;G11C11/56;H01L21/8242;H01L27/108;H01L29/786 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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