| 摘要 |
PROBLEM TO BE SOLVED: To provide a full depleted SOI semiconductor device provided with a back gate electrode, where a semiconductor layer (SOI layer) just under a gate electrode is small in thickness, and other semiconductor layers other than the SOI layer are large in thickness and low in resistance. SOLUTION: An SOI semiconductor device consists of an interlayer film 18 formed on a support substrate 20, an insulating layer 14 formed on the interlayer film 18, a semiconductor layer 10A formed on the surface of the insulating layer 14 and surrounded with the insulating layer 14, source/drain regions 34 and a channel forming region 35 formed in the semiconductor layer 10A, a gate electrode 31 formed on the channel forming region 35 through the intermediary of a gate insulating film 30, a groove 15 extended inside the semiconductor layer 10A penetrating through the insulating layer 14, a back gate electrode 17 which is formed of conductive material and filled in the groove 15, and an oxide film 16 formed between the back gate electrode 17 and the semiconductor layer 10A.
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