发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To improve a yield by adding a function of disabling a spare element to a redundancy control circuit for selecting which of an element and the spare element is to be used. SOLUTION: When a fuse of a disable fuse latch circuit 43 in a redundant word line-selecting circuit is cut once, it generates a state in which a (Vss) level is outputted. Irrespective of a state of the other fuse latch circuits and a state of address signals, an output signal of a logic circuit 45, namely, a signal ordering to activate a redundant word line becomes the Vss level at all times. In consequence of this, a redundant word line corresponding to the redundant word line-selecting circuit including the latch circuit 43 with the fuse cut cannot be used any more. When a redundant memory cell used as a replacement comes to fail, the failing redundant memory cell is disabled and then replaced with a different redundant memory cell not used yet.
申请公布号 JP2001067891(A) 申请公布日期 2001.03.16
申请号 JP19990246172 申请日期 1999.08.31
申请人 TOSHIBA CORP 发明人 SHIRAI YUTAKA;KATO DAISUKE;YOSHIDA MUNEHIRO
分类号 G11C29/04;G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/04
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