| 摘要 |
PROBLEM TO BE SOLVED: To reduce emitter, base and collector resistance of a semiconductor device, by forming a conductivity type layer excepting a base and an emitter and a single crystalline silicon layer as a collector, and arranging an external base region connected to a base in a periphery of the collector. SOLUTION: Single crystalline silicon 10 is made to grow on an exposed silicon layer at least about the degree of a thickness from the surface of an emitter 7 on an oxide film and an upper surface of an oxide film 8, the surface of the single crystalline silicon layer 10 is thermally oxidized, an oxide film 11 is formed and a sidewall is removed by a CDE method. Then, a single crystalline silicon layer exposed by ion implantation of p-type impurities is made a base region 12, resist is processed to a specified shape, N-type impurities are subjected to ion implantation, and an upper part of the silicon single crystalline layer 10 is formed as a collector 13. Then, resist is processed to a specified shape, p-type impurities are subjected to ion implantation, and an external base region is formed.
|
