发明名称 |
Argon doped epitaxial layers for inhibiting punchthrough within a semiconductor device |
摘要 |
A fabrication process and transistor are described in which a transistor having decreased susceptibility to punchthrough and increased resistance to impurity diffusion is formed. One or more argon doped silicon epitaxial layers are formed superjacent a semiconductor substrate. In a preferred dual layer embodiment, a first argon doped silicon epi layer is grown over a substrate, and a second argon doped epi layer, preferably having an argon concentration less than that in the first epi layer, is formed over the first epi layer. A transistor is formed in an active region of a well having a channel laterally bounded by source/drain regions located exclusively in the second epi layer. The lighter argon doping of the second epi layer accommodates current flow in the channel while acting as a barrier to impurity outdiffusion and inhibiting punchthrough. The more heavily doped first epi layer serves primarily as a barrier to outdiffusion of impurities from the bulk substrate.
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申请公布号 |
US6204153(B1) |
申请公布日期 |
2001.03.20 |
申请号 |
US19990427462 |
申请日期 |
1999.10.22 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GARDNER MARK I.;FULFORD, JR. H. JIM;MAY CHARLES E. |
分类号 |
H01L21/205;H01L21/336;H01L29/10;H01L29/167;H01L29/32;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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