| 摘要 |
A Bragg modulator modulates the intensity of a light beam, in particular of a laser beam. The Bragg modulator includes an electro-optic crystal wafer with a rectangular top face, in particular a lithium niobate or lithium tantalate crystal wafer, and a grid structure with normal zones and inversion zones. In the inversion zones, the direction of the spontaneous polarization is inverted compared to a normal direction in the normal zones. Electrodes are disposed on the top and bottom faces of the crystal wafer to generate an electric field therebetween. The grid structure is spaced apart from the front, back and side faces of the crystal wafer and is completely covered by the electrodes. The inversion zones of the grid structure are disposed at the Bragg angle (&THgr;B) relative to the direction of a light beam entering the front face of the crystal wafer. The entire grid structure is positioned such that the refracted light beam exits the crystal wafer on its rear face.
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