| 摘要 |
PROBLEM TO BE SOLVED: To measure the lifetime at a contact part accurately when the reliability at the contact part is evaluated by electromigration test. SOLUTION: The semiconductor device has an interconnection region 100 comprising a second interconnection part 10 for evaluating electromigration test provided in a specified pattern, a contact part 12 connected electrically with the second interconnection part 10 while penetrating a second interlayer insulating layer 14, and a heat dissipating part 11. The heat dissipating part 11 is disposed continuously to the contact part 12 in order to release heat generated therefrom at the time of electromigration test.
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