| 摘要 |
PROBLEM TO BE SOLVED: To provide a wiring structure of high reliability, which is superior in adhesion by restraining exfoliation of an SiOF-(silicon oxide) film, in a wiring structure using an SiOF film having low permitivity. SOLUTION: This semiconductor device is provided with a substrate 11, a wiring 13 which is formed on the substrate 11 and has a P-SiN film 14 formed on the upper surface, a silicon oxide film a 15 which is formed on the side part of the wiring 13 (includes the P-SiN film 14) and contains fluorine, a silicon oxide film 16, which is formed continuously on the P-SiN film 14 and the silicon oxide film 15 containing fluorine.
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