| 摘要 |
PROBLEM TO BE SOLVED: To suppress the diffusion of impurities in a gate electrode into a channel region caused through a gate insulating film, and to prevent an impurity ion in a source/drain region from being partially and abnormally diffused in a channel region direction. SOLUTION: A polysilicon film 4 is deposited onto a gate insulating film 3 for carrying out patterning to the pattern of a gate electrode 5. Before a source/drain region 9 is formed, nitriding treatment is made in atmosphere containing nitride, and nitride is newly introduced into the gate insulating film 3 near the end of the gate electrode 5. Or, after the gate electrode 5 is subjected to the patterning, before the source/drain region 9 is formed, oxidation treatment is made, thus taking one part of damage and contamination being generated on the patterning of the gate electrode 5 into the oxide film for eliminating from a substrate. After that, the nitriding treatment is made, thus aggressively introducing nitrogen to the oxide film that is formed near the end of the gate electrode 5 by the oxidation treatment, and contains the damage.
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