BONDED WAFER, MANUFACTURING METHOD THEREOF, AND INTEGRATED CIRCUIT MANUFACTURED THEREBY

摘要

PROBLEM TO BE SOLVED: To provide a technology for accurately controlling the thickness of a device wafer part of a bonded wafer when the device wafer is made thinner. SOLUTION: The region of a first main surface 22 of a first wafer 20 is diffused to manufacture a bonded wafer 54. A trench 30 is etched by a specified distance in the first wafer 20 toward a second main surface 32 from the first main surface 22. The first main surface 22 and the trench 30 are coated with an oxide 34. The first main surface 22 of the first wafer 20 is jointed to a second wafer 50 to form the bonded wafer 54. The second main surface of the bonded wafer 54 acts as the second main surface 32 of the first wafer as well, which is removed until the oxide 34 in the trench 30 is detected. The bonded wafer 54 is cut into chips, and packaged as an integrated circuit.