发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To connect portions which are comparatively adjacent and to be connected through wiring, while restraining the wiring capacitance small. SOLUTION: Two source drain regions 20 which belong to different elements adjacent to each other are connected interposing a metal layer 14 having the same height as a metal layer 10 which makes a part of a gate electrode. In a manufacturing process, the metal layer 14 can be formed to have the same height as the metal layer 10 by using an insulating layer 8 which is interposed between two insulating layers 7, 16 which function as molds for burying the metal layers 10, 14, 15 and are composed of the same material. The layer 8 is composed of material different from layers 7, 16.
申请公布号 JP2001127169(A) 申请公布日期 2001.05.11
申请号 JP19990305108 申请日期 1999.10.27
申请人 MITSUBISHI ELECTRIC CORP 发明人 HOTTA KATSUYUKI;KUROI TAKASHI;ITOU YASUYOSHI;SHIOZAWA KATSUOMI
分类号 H01L21/28;H01L21/336;H01L21/768;H01L21/8234;H01L23/522;H01L23/535;H01L27/088;H01L29/78;(IPC1-7):H01L21/823 主分类号 H01L21/28
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