METHOD OF FORMING FILM AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method with which a new silicon-containing insulating film, which is different from the SOG (spin-on-glass) film and FSG (fluorinated silicon oxide) film formed in the conventional example, can be formed and a semiconductor device. SOLUTION: This silicon-containing insulating film 204 is formed on a substrate 103 through causing a reaction by ionizing a reaction gas, containing an Si(OR)nHm compound (where R is a alkyl group and n+m=4), an SiFp(OR)q compound (where R is an alkyl group and p+q=4), and an oxidizing gas into a plasma with a microwave.