发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, with which a polyimide film can be made usable as a component of a chip by improving adhesion between the polyimide film and a metal film. SOLUTION: In this method of manufacturing semiconductor device, a film 4 containing hexamethyldisilazane is interposed between the polyimide film 3 and an aluminum film 2, as shown in fig. (d). Consequently, direct reaction of the aluminum film 2 to water can be inhibited, and in addition, adhesion between the polyimide film 5 and film 4 is improved, resulting in the suppression of the occurrence of peeling and corrosion. In addition, the polymide film 5 can be utilized as a component of a chip.
申请公布号 JP2001189309(A) 申请公布日期 2001.07.10
申请号 JP20000000290 申请日期 2000.01.05
申请人 FUJI ELECTRIC CO LTD 发明人 KATO TSUTOMU
分类号 H01L21/768;H01L21/312;H01L23/522;(IPC1-7):H01L21/312 主分类号 H01L21/768
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