| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a polycrystalline thin-film semiconductor device, which has little variance in its electrical characteristics, at a comparatively low temperature. SOLUTION: A polycrystalline semiconductor film is formed and thereafter, rare gas element ions are selectively implanted, in only the channel formation region of the semiconductor film and the regions in the vicinity of the channel formation region and in such a way, that the center of the range of charged particles in the ions is positioned from the interface under the lower side of the semiconductor film to be within a distance of 10 nm±10 nm. After that, an Xecl excimer laser is applied in the film thickness direction of the semiconductor film at an energy density for fusing the semiconductor film at 85% or higher to about 97% or lower and the semiconductor film is recyrstallized.
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