SOLID-STATE IMAGE PICK-UP DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a solid-state image pick-up device of a structure wherein transfer electrodes forming CCD type vertical charge transfer paths are mutually overlapped, and which can prevent generation of a dark signal output and reduction of an S/N ratio when each of photoelectric conversion elements is made of a buried photodiode. SOLUTION: Upon formation of CCD type charge transfer paths having a multiplicity of transfer electrodes of a mutual-overlap structure, an overlap width between the adjacent transfer electrodes is set to be less than 0.2μm.