发明名称 IGNITER FOR TITANIUM SEMICONDUCTOR BRIDGE
摘要 PROBLEM TO BE SOLVED: To ignite an energy material. SOLUTION: An igniting device for a titanium semiconductor bridge is provided with a substrate on which a pair of pads connected by the bridge with a space are mounted thereon. The pad and the bridge are constituted of a layer of polysilicon or crystalline silicon covered by the layer of titanium. Metallic lands are superposed on the pads, however, the bridge is left under exposed condition so that the lands can be arranged so as to be contacted with an energy material filling matter. A method wherein the igniting device for the titanium semiconductor bridge is stabilized with respect to the fluctuation of the temperature induction of an electric resistor in the bridge comprises the heating of the igniting device for the titanium semiconductor bridge to the high temperature of about 37-250 deg.C, for example.
申请公布号 JP2001241896(A) 申请公布日期 2001.09.07
申请号 JP20000382092 申请日期 2000.12.15
申请人 SCB TECHNOLOGIES INC 发明人 MARTINEZ-TOVAR BERNARDO;FOSTER MARTIN C
分类号 F42B3/10;F42B3/13;H01B7/00;(IPC1-7):F42B3/10 主分类号 F42B3/10
代理机构 代理人
主权项
地址