发明名称 SURFACE ACOUSTIC WAVE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a surface acoustic wave device which has a wide bandwidth and is excellent in rectangularity ratio in a high frequency range in which the added mass effect of an Au or Cu electrode becomes conspicuous. SOLUTION: The cut angle of theθrotation Y-X substrate of LiTaO3 or LiNbO3 is optimized at an angle higher than that in the conventional practice with respect to the added mass of an Au or Cu electrode formed on a substrate surface.
申请公布号 JP2001251157(A) 申请公布日期 2001.09.14
申请号 JP20010079594 申请日期 2001.03.19
申请人 FUJITSU LTD 发明人 UEDA MASANORI;KAWAUCHI OSAMU;ENDO TAKESHI;IGATA OSAMU;HASHIMOTO KIYONARI;YAMAGUCHI MASATSUNE
分类号 H03H9/145;H03H9/25;(IPC1-7):H03H9/145 主分类号 H03H9/145
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