| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of dry etching by which a high selection rate can be obtained and a method of manufacturing a semiconductor device by which the manufacturing yield or performance of a semiconductor device can be improved by using the method of dry etching. SOLUTION: In this method of dry etching, CH2F2 is used as an etching gas at the time of dry etching. When the etching gas is composed of a plurality of gases, the occupying ratio of the CH2F2 in the mixed gas is adjusted to >=20% and, when a C-containing gas is mixed in the mixed gas, the occupying ratio of the CH2F2 and C-containing gas in the mixed gas is adjusted to >=20% and that of the CH2F2 in the mixed gas is adjusted to >=5%. Consequently, etching takes place in the bottom section of a contact hole, but does not take place on a resist 31, because a resulted product 32 of reaction accumulates on the resist 31. Therefore, the contact hole can be formed without damaging the masking property of the resist 21.
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