| 摘要 |
PROBLEM TO BE SOLVED: To prevent capacitance increase between wirings, in the case where a laminated film made of a high dielectric film and a low dielectric film is used as an interlayer insulating film. SOLUTION: A high dielectric film 4 and a low dielectric film 5 are formed successively on an interlayer insulating film 2, in which a metal wiring 3 is buried. Next, a via hole 6 and a wiring trench 7 are formed in the high dielectric film 4 and the low dielectric film 5 through etching. Here, the etching time is controlled so that the bottom of the wiring trench 7 does not reach the high dielectric film 4, whereby the bottom of the wiring trench 7 exists in the low dielectric film 5. Then, a DD wiring 8 is buried in the via hole 6 and the wiring trench 7.
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