| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having proper characteristics in burying a contact plug in a contact hole and hence preventing short circuiting to an upper layer and increase in contact resistance between the contact plug and the lower layer. SOLUTION: A semiconductor device has a first connection layer 1, an interlayer insulating film 2 formed on the first connection layer 1, a second connection layer (3a, 3b) formed on the interlayer insulating film 2, and contact plugs (4a, 4b) formed in the interlayer insulating film 2 and connecting the first connection layer 1 to the second connection layer (3a, 3b). Each of the contact plugs (4a, 4b) has a slanted portion 6, having a sidewall 5 slantingly widened toward the second connection layer (3a, 3b) and a top end surface (7a, 7b) whose diameter 9 is smaller than the largest diameter 8 to the slanted portion 6.
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