MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a process for manufacturing a semiconductor device formed on a substrate which comprises a semiconductor film of large crystal grain size of good crystallinity with the position of crystal grain boundary of a channel formation layer being controlled for good characteristics and less variation. SOLUTION: On a quartz substrate 11, a gate electrode 12 is formed, and then a gate insulating film 13 is formed before a semiconductor film 14 is formed. YAG2ωlaser 15 is projected from the semiconductor film 14 side.